Postdoctoral Research Staff, Lawrence Livermore National Laboratory, Materials Engineering Division, 2019–2022
Engineering Intern, Infineon Technologies, PMM Innovation Sensors Group & Industrial Power SiC MOSFETs Group, 2018
Engineering Intern, MIT Lincoln Laboratory, RF Technology, 2015
Dong, Y., Dowling, K.M., Hau-Riege, S., Conway, A., Voss, L.F., and Rakheja, S., “Design considerations for gallium arsenide pulse compression photoconductive switch,” Journal of Applied Physics, vol. 131, 13, pp. 134504, 2022.
Dowling, K.M., Dong, Y., Hall, D., Mukherjee, S., Schneider, J.D., Hau-Riege, S., Harrison, S.E., Leos, L., Conway, A., Rakheja, S., and Voss, L.F., “Pulse Compression Photoconductive Switching Using Negative Differential Mobility,” IEEE Transactions on Electron Devices, vol. 69, 2, pp. 590-596, 2022.
Mukherjee, S., Dowling, K.M., Dong. Y, Li, K. Conway, A., Rakheja, S., and Voss, L., “A Prony-based curve-fitting method for characterization of RF pulses from optoelectronic devices,” IEEE Signal Processing Letters, vol. 29, pp. 364-368, 2021.
Milestone, W., Guo, D., Sanati, M., Dowling, K.M., Hau-Riege, S., Voss, L.F., Conway, A., and Joshi, R.P., “Monte Carlo transport analysis to assess intensity dependent response of a carbon-doped GaN photoconductor,” Journal of Applied Physics, vol. 129, 19, p. 195703, 2021.
Rakheja, S. Li, K., Dowling, K.M., Conway, A.M, and Voss, L.F., “Design and simulation of near-terahertz GaN photoconductive switches- operation in the negative differential mobility regime and pulse compression,” IEEE Journal of Electron Devices Society, vol. 9, pp. 521-532, 2021.
Janowitz, J., Holliday, M., Dowling, K., Yeung, B., Kumar, S., Peterson, R., Alpert, H., Chapin, C., Lopez, J., and Senesky, D.G. , “Deployment of InAlN/GaN Hall-effect Sensors for Bucket Transformer Monitoring and Forecasting,” In Proceedings of IEEE Sensors, Virtual Conference, 2020.
Dowling, K.M., Liu, T., Alpert, H.S., Chapin, C.A., Eisner, S.R., Yalamarthy, A., Satterthwaite, P.F., Köck, H., Ausserlechner, U., Asheghi, M., Goodson, K.E., and Senesky, D.G., “Low Offset and Noise in High Biased GaN 2DEG Hall-Effect Plates Investigated with Infrared Microscopy,” Journal of Microelectromechanical Systems, vol. 29, 5, pp.1-8, 2020.
Alpert, H.S., Chapin, C.A., Dowling, K.M., Benbrook, S.R., Köck, H., Ausserlechner, U., Senesky, D.G., “Sensitivity of 2DEG-based Hall-effect sensors at high temperatures,” Review of Scientific Instruments, vol. 91, 2, p 025003, 2020.
Nguyen, T.-K., Phan, H.-P., Dowling, K.M., Yalamarthy, A.S., Dinh, T., Balakrishnan, V., Liu, T., Chapin, C.A., Truong, Q.-D., Dau, V.T., Goodson, K.E., Senesky, D.G., Dao, D.V., Nguyen, N-T., Lithography and Etching-Free Microfabrication of Silicon Carbide on Insulator Using Direct UV Laser Ablation, Advanced Engineering Materials, vol. 22, 4, p. 1901173, 2020.
Yalamarthy, A.S., Muñoz Rojo, M., Bruefach, A., Boone, D., Dowling, K.M., Satterthwaite, P.F., Goldhaber-Gordon, D., Pop, E. and Senesky, D.G., “Significant Phonon Drag Enables High Power Factor in the AlGaN/GaN Two-Dimensional Electron Gas,” Nano letters. 2019.
Dowling, K.M., Alpert, H.S., Yalamarthy, A.S., Satterthwaite, P.F., Kumar, S., Köck, H., Ausserlechner, U., and Senesky, D.G., “Micro-Tesla Offset in Thermally Stable AlGaN/GaN 2DEG Hall-effect Plates using Current Spinning,” IEEE Sensors Letters, Vol 3. 3, 2019.
Alpert, H.S., Dowling, K.M., Chapin, C.A., Yalamarthy, A.S., Benbrook, S.R., Köck, H., Ausserlechner, U., and Senesky, D.G., “Effect of Geometry on Sensitivity and Offset of AlGaN/GaN and InAlN/GaN Hall-effect Sensors,” IEEE Sensors Journal, Vol. 19, 10, pp 3640-3646, 2019.
Phan, H.-P., Dowling, K.M., Ngyuen, T.-K., Chapin, C.A., Dinh, T., Miller, R.A., Han, J., Iacopi, A., Senesky, D.G., and Nguyen, N.-T., “Characterization of the piezoresistance in highly doped p-type 3C-SiC at cryogenic temperatures,” RSC Advances, vol. 8, pp. 29976-29979, 2018.
Ngyuyn, T.K., Phan, H.-P,, Dinh, T., Dowling, K.M., Foisal, A.R., Senesky, D.G., Nguyen, N.-T, and Dao, D.V., “Highly sensitive 4H-SiC pressure sensor at cryogenic and elevated temperatures,” Materials & Design, vol. 156, pp 441-445, 2018.
Phan, H.-P., Dowling, K.M., Ngyuen, T.-K., Dinh, T., Senesky, D.G., Namazu, T., Dao, D.V., and Nguyen, N.-T., “Highly sensitive pressure sensors employing 3C-SiC nanowires fabricated on a free standing structure,” Materials & Design, vol. 156, pp. 16-21, 2018
Chapin, C.A., Dowling, K.M., Phan, H.P., Chen, R., and Senesky, D.G. ,“Temperature-Dependent Transient Behavior of AlGaN/GaN High Electron Mobility Pressure Sensors,” In Proceedings of Solid-State Sensors, Actuators and Microsystems Workshop, Hilton Head, SC, 2018.
Dowling, K.M., Alpert, H.S., Zhang, P., Ramirez, A.N., Yalamarthy, A.S., Köck, H., Ausserlechner, U., and Senesky, D.G. , “The Effect of Bias Conditions on AlGaN/GaN 2DEG Hall Plates,” In Proceedings of Solid-State Sensors, Actuators and Microsystems Workshop, Hilton Head, SC, 2018
Yalamarthy, A.S., Miller, R.A., Dowling, K.M., and Senesky, D.G., “Piezoelectric 2DEG "Metal" Electrodes for High Responsivity, Low Dark Current AlGaN/GaN Photodetectors,” In Proceedings of Compound Semiconductor Week (CSW), Boston, MA, 2018.
Miller, R. A., So, H., Chiamori, H. C., Dowling, K. M., Wang, Y., and Senesky, D.G., “Graphene-enhanced gallium nitride ultraviolet photodetectors under 2 MeV proton irradiation,” Applied Physics Letters, vol. 111, no. 24, 241902, 2017
Yang, M.X., Dowling, K., Senesky, D., and Wong, H.-S.P., “Rapid Prototyping Tape Stencils for the Application of Solder Paste,” presented at the International Symposium on Microelectronics: Fall 2017, Vol. 2017, 1, pp. 000652-00065.
Chapin, C. A., Miller, R. A., Chen, R., Dowling, K. M., and Senesky, D.G., “InAlN/GaN high electron mobility micro-pressure sensors for high-temperature environments,” Sensors and Actuators A: Physical, Vol. 263, pp. 216–223, 2017.
Chapin, C., Miller, R., Chen, R., Dowling, K., and Senesky, D., “Low Temperature and Pressure Response of INAlN/GAN Ring-Shaped High Electron Mobility Transistors,” In Proceedings of IEEE Transducers Conference in Kaohsuing, Taiwan, June 18-22,2017.
Dowling, K.M., So, H., Toor, A., Chapin, C.A., and Senesky, D.G., “Lithography-free microfabrication of AlGaN/GaN 2DEG strain sensors using laser ablation and direct wirebonding,” Microelectronic Engineering, vol. 173, pp54-57, 2017
Ransom, E.H, Dowling, K.M., Rocca-Bejar, D., Palko, J., Senesky, D, “High-Throughput pulse laser manufacturing etch process for complex and released structures from bulk 4H-SiC,” presented at IEEE MEMS Conference at Las Vegas, NV USA January 22-26 2017.
Dowling, K.M., Ransom, E.H., Senesky, D.G., “Profile Evolution of High Aspect Ratio Silicon Carbide Trenches using Inductive Coupled Plasma Etching”, IEEE Journal of Microelectromechanical Systems, 2017, 26(1), pp. 135-142.
Miller, R., Chapin, C., Dowling, K., Chen, R., Suria, A., Senesky, D., “Low-Temperature Operation of Gallium Nitride Based Ultraviolet Photodetectors,” presented at AIAA SPACE Conferences and Exposition at Long Beach, CA. Sept 13-16, 2013. pp 1-6. DOI: 10.2514/6.2016-5497
Dowling, K., Suria, A., Shankar, A., Lee, H., Won, Y., Asheghi, M., Goodson, K., Senesky, D., “Inductive Coupled Plasma Etching of High Aspect Ratio Silicon Carbide Microchannels for Localized Cooling,” presented at InterpackICNMM2015 at San Francisco, CA July 5-9, 2015. DOI: 10.1115/IPACK2015-48409.
Dowling, K., Suria, A., Shankar, A., Chapin, C., Senesky, D. “Multilayer Etch Masks for 3-Dimensional Fabrication of Robust Silicon Carbide Microstructures,” presented at IEEE MEMS Conference at Estoril, Portugal. Jan 18-22, 2015, pp 284-287., acceptance rate 41%.
Sadeghi, M.M., Dowling, K., Peterson, R.L., Najafi, K. “High Sensitivity, High Density Micro-Hydraulic Force Sensor Array Using Stereo-Lithography Fabrication Technique,” presented at IEEE MEMS Conference at Taipei, Taiwan. Jan 20-24, 2013, pp 673-676., acceptance rate 40%.
Tutorial at Stanford University, Stanford, CA, USA
Tutorial at Cañada Community College, Redwood City, CA, USA
Talk at NASA Jet Propulsion Labooratory, Pasadena, CA, USA
Talk at TU Delft Department of Microelectronics, Delft, The Netherlands (Virtual)