Highly sensitive 4H-SiC pressure sensor at cryogenic and elevated temperatures

Published in Materials & Design, 2018

Recommended citation: Ngyuyn, T.K., Phan, H.-P,, Dinh, T., Dowling, K.M., Foisal, A.R., Senesky, D.G., Nguyen, N.-T, and Dao, D.V., “Highly sensitive 4H-SiC pressure sensor at cryogenic and elevated temperatures,” Materials & Design, vol. 156, pp 441-445, 2018. https://doi.org/10.1016/j.matdes.2018.07.014