Characterization of the piezoresistance in highly doped p-type 3C-SiC at cryogenic temperatures

Published in RSC Advances, 2018

Recommended citation: Phan, H.-P., Dowling, K.M., Ngyuen, T.-K., Chapin, C.A., Dinh, T., Miller, R.A., Han, J., Iacopi, A., Senesky, D.G., and Nguyen, N.-T., “Characterization of the piezoresistance in highly doped p-type 3C-SiC at cryogenic temperatures,” RSC Advances, vol. 8, pp. 29976-29979, 2018. https://doi.org/10.1039/C8RA05797D