Low Temperature and Pressure Response of INAlN/GAN Ring-Shaped High Electron Mobility Transistors

Published in IEEE Transducers Conference, 2017

Recommended citation: Chapin, C., Miller, R., Chen, R., Dowling, K., and Senesky, D., “Low Temperature and Pressure Response of INAlN/GAN Ring-Shaped High Electron Mobility Transistors,” In Proceedings of IEEE Transducers Conference in Kaohsuing, Taiwan, June 18-22,2017. https://doi.org/10.1109/TRANSDUCERS.2017.7994166