Profile Evolution of High Aspect Ratio Silicon Carbide Trenches using Inductive Coupled Plasma Etching

Published in IEEE Journal of Microelectromechanical Systems, 2016

Recommended citation: Dowling, K.M., Ransom, E.H., Senesky, D.G., “Profile Evolution of High Aspect Ratio Silicon Carbide Trenches using Inductive Coupled Plasma Etching”, IEEE Journal of Microelectromechanical Systems, 2017, 26(1), pp. 135-142. https://doi.org/10.1109/JMEMS.2016.2621131