Design and simulation of near-terahertz GaN photoconductive switches- operation in the negative differential mobility regime and pulse compression

Published in IEEE Journal of Electron Devices Society, 2021

Recommended citation: Rakheja, S. Li, K., Dowling, K.M., Conway, A.M, and Voss, L.F., “Design and simulation of near-terahertz GaN photoconductive switches- operation in the negative differential mobility regime and pulse compression,” IEEE Journal of Electron Devices Society, vol. 9, pp. 521-532, 2021. https://doi.org/10.1109/JEDS.2021.3077761