InAlN/GaN high electron mobility micro-pressure sensors for high-temperature environments

Published in Sensors and Actuators A: Physical, 2017

Recommended citation: Chapin, C. A., Miller, R. A., Chen, R., Dowling, K. M., and Senesky, D.G., “InAlN/GaN high electron mobility micro-pressure sensors for high-temperature environments,” Sensors and Actuators A: Physical, Vol. 263, pp. 216–223, 2017. https://doi.org/10.1016/j.sna.2017.06.009