Temperature-Dependent Transient Behavior of AlGaN/GaN High Electron Mobility Pressure Sensors

Published in Solid-State Sensors, Actuators and Microsystems Workshop, 2018

Recommended citation: Chapin, C.A., Dowling, K.M., Phan, H.P., Chen, R., and Senesky, D.G. ,“Temperature-Dependent Transient Behavior of AlGaN/GaN High Electron Mobility Pressure Sensors,” In Proceedings of Solid-State Sensors, Actuators and Microsystems Workshop, Hilton Head, SC, 2018.