Effect of Geometry on Sensitivity and Offset of AlGaN/GaN and InAlN/GaN Hall-effect Sensors

Published in IEEE Sensors Journal, 2019

Recommended citation: Alpert, H.S., Dowling, K.M., Chapin, C.A., Yalamarthy, A.S., Benbrook, S.R., Köck, H., Ausserlechner, U., and Senesky, D.G., “Effect of Geometry on Sensitivity and Offset of AlGaN/GaN and InAlN/GaN Hall-effect Sensors,” IEEE Sensors Journal, Vol. 19, 10, pp 3640-3646, 2019. https://doi.org/10.1109/JSEN.2019.2895546