Monte Carlo transport analysis to assess intensity dependent response of a carbon-doped GaN photoconductor

Published in Journal of Applied Physics, 2021

Recommended citation: Milestone, W., Guo, D., Sanati, M., Dowling, K.M., Hau-Riege, S., Voss, L.F., Conway, A., and Joshi, R.P., “Monte Carlo transport analysis to assess intensity dependent response of a carbon-doped GaN photoconductor,” Journal of Applied Physics, vol. 129, 19, p. 195703, 2021. https://doi.org/10.1063/5.0040173

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